Growth controlled fabrication and cathodoluminescence study of 3D confined GaAs volumes on non-planar patterned GaAs(0 0 1) substrates
نویسندگان
چکیده
We report on (a) the effect of growth interruption on the growth profile evolution in growth on non-planar patterned mesa tops via substrate-encoded size-reducing epitaxy (SESRE) and (b) the optical behavior of isolated 3D-confined GaAs volumes as well as 3D-confined GaAs volumes coupled with 1D-confined quantum wells (QWs) fabricated by SESRE. Steady-state excitation and time-resolved cathodoluminescence (CL) are used for these optical studies.
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